600 V bootstrap — the rating that defines the bus
The IR2101 is a half-bridge gate driver from Infineon designed to drive both IGBTs and N-channel MOSFETs in a high-side/low-side configuration. Its 600 V maximum bootstrap voltage sets the high-side rail ceiling. The 10 V to 20 V supply range covers the typical gate-drive bias rails used with standard IGBTs and power MOSFETs.
Output current and switching speed — sizing the gate drive
Peak output current is 210 mA source and 360 mA sink. The asymmetric sink/source ratio favours faster turn-off than turn-on, which helps manage the Miller plateau during the switching transition. For larger IGBT modules with gate charge above ~100 nC, the 210 mA source current will stretch the turn-on edge; a higher-current driver should be considered.
The IR2101 is listed as obsolete. Infineon has discontinued this part and no longer accepts factory orders.
Through-hole 8-DIP — legacy footprint
The IR2101 is supplied in an 8-DIP (0.300", 7.62 mm) through-hole package, with the supplier device package designated as 8-PDIP. Shipping form is Tube.
