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Infineon Technologies IR2011SPBF — Memory (DRAM / SRAM / Flash / EEPROM)
Infineon Technologies

IR2011SPBF Gate Driver, High/Low Side, 200V Bootstrap

MPNIR2011SPBF
End of Life

Infineon IR2011SPBF high-side/low-side gate driver, N-Channel MOSFET, inverting input, independent channels, 10V-20V supply, 35ns/20ns rise/fall, 1A peak output, 8-SOIC package, -40°C to 150°C.

$2.78Ref. price · indicative, final on quote
IR2011SPBF datasheet
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IR2011SPBF Technical Specifications
ParameterValue
Gate typeN-Channel MOSFET
Input typeInverting
Channel typeIndependent
Mounting typeSurface Mount
Voltage10V ~ 20V
Logic voltage - VIL, VIH0.7V, 2.2V
High side voltage - max (Bootstrap)200 V
Current - peak output (Source, sink)1A, 1A
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Case8-SOIC (0.154\", 3.90mm Width)
Number of drivers2
Driven configurationHigh-Side or Low-Side
Rise (Fall time)35ns, 20ns

Product details

High-side driver with 200 V bootstrap — what that means for the bus

The Infineon IR2011SPBF is a high-side and low-side gate driver built for N-channel MOSFETs in a half-bridge or dual-switch topology. Its bootstrap supply handles up to 200 V on the high side. The inverting input logic (VIL 0.7 V, VIH 2.2 V) matches common PWM controller outputs; the two channels are independent.

1 A peak drive and 150 °C junction — where it fits

Each channel delivers 1 A peak source and 1 A sink current, with 35 ns rise and 20 ns fall times. The -40 °C to 150 °C junction temperature range suits hot PCB environments.

Supply range and package — BOM-fit details

The driver runs from a 10 V to 20 V supply rail. The 8-SOIC package (0.154" body width, 3.90 mm) is a surface-mount footprint. ROHS3 compliant.

Frequently asked questions

Can IR2011SPBF drive N-channel MOSFETs with bootstrap supply up to 200V?

Yes, the IR2011SPBF is designed for N-channel MOSFETs and its high-side bootstrap is rated to 200 V, so it directly drives the top FET in a half-bridge up to that bus voltage.

What is the IR2011SPBF replacement or equivalent part?

The IR21064STRPBF is a pin-compatible high-side/low-side driver with the same bootstrap voltage capability, but its peak output is 0.2 A and rise/fall times are 150 ns/50 ns — verify your gate charge and switching speed budget before substituting.

Is IR2011SPBF RoHS compliant?

Yes, the IR2011SPBF is ROHS3 compliant, with no restricted-substance exemptions.