The Infineon IR2011SPBF is a high-side and low-side gate driver built for N-channel MOSFETs in a half-bridge or dual-switch topology. Its bootstrap supply handles up to 200 V on the high side. The inverting input logic (VIL 0.7 V, VIH 2.2 V) matches common PWM controller outputs; the two channels are independent.
1 A peak drive and 150 °C junction — where it fits
Each channel delivers 1 A peak source and 1 A sink current, with 35 ns rise and 20 ns fall times.
Supply range and package — BOM-fit details
The driver runs from a 10 V to 20 V supply rail. The 8-SOIC package (0.154" body width, 3.90 mm) is a surface-mount footprint. ROHS3 compliant.