Infineon IR2010STRPBF half-bridge gate driver, 3A peak source/sink, 200V bootstrap, 10/15ns rise/fall, drives IGBT and N-Channel MOSFET, 16-SOIC surface mount, -40°C to 150°C.
| Parameter | Value |
|---|---|
| Gate type | IGBT, N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Independent |
| Mounting | Surface Mount |
| Supply voltage | 10V ~ 20V |
| Logic voltage - VIL, VIH | 6V, 9.5V |
| High side voltage - max (Bootstrap) | 200 V |
| Current - peak output (Source, sink) | 3A, 3A |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | 16-SOIC (0.295\", 7.50mm Width) |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 10ns, 15ns |
The 16-SOIC wide-body package (7.50 mm width) is a surface-mount part that reworks well under hot air — the 0.295-inch body gives you room to get a nozzle around each pin without cooking adjacent passives. The non-inverting input means a logic high on the input turns the corresponding output on, which simplifies firmware mapping.
The IRS2005STRPBF is a half-bridge driver in the same 16-SOIC package and similar supply range, but its peak output is only 0.29 A versus the IR2010's 3 A — a 10× difference. The IR2010 is the right choice when you need to drive large IGBT or MOSFET gates; the IRS2005 fits lower-current stages.
Yes. The gate type is explicitly listed as IGBT and N-Channel MOSFET. The 3 A peak output and 200 V bootstrap are well matched to small- and medium-power IGBT modules in half-bridge configurations.