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Infineon Technologies IR2010SPBF — Discrete Semiconductors

Infineon IR2010SPBF Half-Bridge Gate Driver, 3A, 16-SOIC

MPNIR2010SPBF
End of Life

Infineon Technologies IR2010SPBF half-bridge gate driver, 3A peak source/sink, 200V bootstrap, non-inverting, independent channels, 16-SOIC surface-mount package, tube.

$3.71Ref. price · indicative, final on quote
Packaging16-SOIC (0.295", 7.50mm Width)
StockContact for availability
Lead timeIn Stock wk
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IR2010SPBF Technical Specifications
ParameterValue
Gate typeIGBT, N-Channel MOSFET
Input typeNon-Inverting
Channel typeIndependent
Mounting typeSurface Mount
Voltage10V ~ 20V
Logic voltage - VIL, VIH6V, 9.5V
High side voltage - max (Bootstrap)200 V
Current - peak output (Source, sink)3A, 3A
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Case16-SOIC (0.295\", 7.50mm Width)
Number of drivers2
Driven configurationHalf-Bridge
Rise (Fall time)10ns, 15ns

Product details

What the 3A peak output means for your power stage

The IR2010SPBF is a half-bridge gate driver rated for 3A peak source and 3A peak sink current, which means it can charge and discharge the gate capacitance of a large IGBT or power MOSFET in the 10-15 ns range — fast enough to keep switching losses low in a 100-200 kHz SMPS or motor-drive inverter without needing an external booster stage.

Supply rails and bootstrap headroom

Operating from a 10V to 20V single supply, the driver's high-side floating channel supports a bootstrap voltage up to 200V — this covers the DC bus of a 120V or 160V motor drive and leaves margin for the bootstrap diode drop and the high-side supply ripple. The logic input thresholds are set at 6V (VIL) and 9.5V (VIH), so the driver accepts 3.3V or 5V logic directly only if the signal swings above 9.5V — in practice, a level-shifter or a 12V gate-drive transformer output is needed to guarantee the VIH threshold.

Package, temperature grade, and compliance

Housed in a 16-SOIC wide-body (0.295-inch, 7.50mm width) surface-mount package, supplied in tube. The operating junction temperature range is -40°C to 150°C, which qualifies it for industrial and automotive under-hood environments where the ambient can reach 105°C and the die sees self-heating from the 3A gate drive.

Frequently asked questions

What gate types does the IR2010SPBF drive?

The driver is specified for IGBT and N-Channel MOSFET gates. The half-bridge configuration with independent channels allows it to drive both the high-side and low-side switches in a totem-pole or half-bridge topology.

What compliance documentation does Infineon provide for the IR2010SPBF?

Infineon certifies the IR2010SPBF as ROHS3 compliant. Standard compliance documentation (RoHS declaration, REACH statement, material declaration) is available through the manufacturer's product page.