Infineon IR2010PBF half-bridge gate driver, 3A peak source/sink, 200V bootstrap, 10ns rise / 15ns fall, 10V-20V supply, -40°C to 150°C junction, 14-DIP through-hole, ROHS3 compliant.
| Parameter | Value |
|---|---|
| Gate type | IGBT, N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Independent |
| Mounting | Through Hole |
| Supply voltage | 10V ~ 20V |
| Logic voltage - VIL, VIH | 6V, 9.5V |
| High side voltage - max (Bootstrap) | 200 V |
| Current - peak output (Source, sink) | 3A, 3A |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Case | 14-DIP (0.300\", 7.62mm) |
| Number of drivers | 2 |
| Driven configuration | Half-Bridge |
| Rise (Fall time) | 10ns, 15ns |
Rated for a junction temperature range of -40°C to 150°C, the IR2010PBF is suited for industrial and automotive environments — motor drives in factory automation, PFC stages in power supplies, or under-hood power modules. The 14-DIP through-hole package is a through-hole footprint, which matters for legacy board layouts, socketed prototyping, or designs where hand-solderability is preferred over reflow.
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