40 V, 1.35 mOhm — the conduction loss floor
Infineon IQE013N04LM6CGSCATMA1 OptiMOS 6 N-channel MOSFET, 40 V Vds, 1.35 mOhm Rds(on) at 20 A and 10 V, 205 A Id at Tc.
175°C junction — the thermal ceiling
The 175°C Tj(max) provides thermal headroom in high-ambient environments.
The ±20 V maximum gate-source voltage allows direct drive from a 12 V or 15 V gate-drive rail without external clamping, but a 4.5 V logic-level drive will leave Rds(on) above the minimum — the 10 V drive rail is the efficiency sweet spot.
The OptiMOS 6 series is Infineon's current low-voltage trench platform, so the part is fully in production and can be designed into new builds without a sunset clock. ROHS3 compliance covers the ten restricted substances including the four phthalates — no additional exemption paperwork needed for EU-market equipment.