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Infineon Technologies IQE013N04LM6CGSCATMA1

Infineon IQE013N04LM6CGSCATMA1 OptiMOS 6 N-Ch 40V MOSFET

MPNIQE013N04LM6CGSCATMA1
End of Life

Infineon OptiMOS 6 N-Channel MOSFET, 40V Vds, 1.35mOhm Rds(on) @ 20A/10V, 205A Id @ Tc, 41nC Qg, PG-WHTFN-9-1, -55 to 175°C Tj.

$2.98Ref. price · indicative, final on quote
Infineon Technologies IQE013N04LM6CGSCATMA1 datasheet (PDF)
Packaging9-PowerWDFN
RoHSROHS3 Compliant
SeriesOptiMOS™ 6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IQE013N04LM6CGSCATMA1 specifications
ParameterValue
SeriesOptiMOS™ 6
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C31A (Ta), 205A (Tc)
Power dissipation2.5W (Ta), 107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case9-PowerWDFN
Vgs(th) (Max) @ id2V @ 51µA
Rds on (Max) @ id, vgs1.35mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs41 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3800 pF @ 20 V

Product details

40 V, 1.35 mOhm — the conduction loss floor

Infineon IQE013N04LM6CGSCATMA1 OptiMOS 6 N-channel MOSFET, 40 V Vds, 1.35 mOhm Rds(on) at 20 A and 10 V, 205 A Id at Tc.

175°C junction — the thermal ceiling

The 175°C Tj(max) provides thermal headroom in high-ambient environments.

The ±20 V maximum gate-source voltage allows direct drive from a 12 V or 15 V gate-drive rail without external clamping, but a 4.5 V logic-level drive will leave Rds(on) above the minimum — the 10 V drive rail is the efficiency sweet spot.

The OptiMOS 6 series is Infineon's current low-voltage trench platform, so the part is fully in production and can be designed into new builds without a sunset clock. ROHS3 compliance covers the ten restricted substances including the four phthalates — no additional exemption paperwork needed for EU-market equipment.