IQE013N04LM6ATMA1

Infineon Technologies · OptiMOS™ Series

Infineon OptiMOS™ series, IQE013N04LM6ATMA1, N-Channel MOSFET, 40V Vdss, 1.35mOhm max Rds(on) @ 20A, 10V, 205A continuous drain (Tc), PG-TSON-8-4 package, -55°C to 175°C.

Infineon Technologies IQE013N04LM6ATMA1
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[IN STOCK] In Stock: 17 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IQE013N04LM6ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Current - continuous drain (Id) @ 25°C31A (Ta), 205A (Tc)
Power dissipation2.5W (Ta), 107W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id2V @ 51µA
Rds on (Max) @ id, vgs1.35mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs55 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3900 pF @ 20 V

Technical details

The headline on-resistance is 1.35 mOhm maximum at Vgs = 10 V and Id = 20 A — this is the figure that sets the conduction loss in a synchronous buck or load switch. Total gate charge is 55 nC at Vgs = 10 V, which tells the drive stage how much current it needs to hit the target switching frequency.

Thermal and current headroom — the two current ratings

The 31 A Ta rating assumes free-air convection on a standard PCB footprint; the 205 A Tc rating requires a heatsink or thermal pad tied to a large copper plane, because the package alone cannot shed that heat. Maximum power dissipation is 2.5 W at ambient (Ta) and 107 W at case temperature (Tc) — the junction-to-case thermal path is the limiting factor for sustained high-current operation.

Package and footprint — PG-TSON-8-4

IQE013N04LM6ATMA1
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