The Infineon IQE013N04LM6ATMA1 is an N-channel MOSFET from the OptiMOS™ series, rated for 40 V drain-to-source and a continuous drain current of 31 A at ambient (Ta) or 205 A at case temperature (Tc). The headline on-resistance is 1.35 mOhm maximum at Vgs = 10 V and Id = 20 A — this is the figure that sets the conduction loss in a synchronous buck or load switch. Total gate charge is 55 nC at Vgs = 10 V, which tells the drive stage how much current it needs to hit the target switching frequency.
Thermal and current headroom — the two current ratings
The 31 A Ta rating assumes free-air convection on a standard PCB footprint; the 205 A Tc rating requires a heatsink or thermal pad tied to a large copper plane, because the package alone cannot shed that heat. Maximum power dissipation is 2.5 W at ambient (Ta) and 107 W at case temperature (Tc) — the junction-to-case thermal path is the limiting factor for sustained high-current operation.
Package and footprint — PG-TSON-8-4
The part comes in an 8-PowerTDFN package, supplier device code PG-TSON-8-4, which is a surface-mount, low-inductance package with an exposed thermal pad on the bottom.