IQE006NE2LM5CGATMA1

Infineon Technologies · OptiMOS™ 5 Series

MOSFET N-CH 25V 41A/298A IPAK

Infineon Technologies IQE006NE2LM5CGATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IQE006NE2LM5CGATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™ 5
FET typeN-Channel
MountingThrough Hole
Drain to source voltage25 V
Current - continuous drain (Id) @ 25°C41A (Ta), 298A (Tc)
Power dissipation2.1W (Ta), 89W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs650mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs82.1 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5453 pF @ 12 V
IQE006NE2LM5CGATMA1
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