The Infineon IPZ65R095C7 is a 650 V N-channel CoolMOS™ power MOSFET in a through-hole TO-247-4 package (PG-TO247-4-1). The 4-pin package includes a dedicated Kelvin-source connection, which decouples the gate-drive loop from the main power loop — this reduces parasitic inductance in the gate path and lets the device switch faster with cleaner gate waveforms. For a designer sizing the primary-side FET in a 400 V bus PFC or an LLC half-bridge, the 650 V Vdss gives 50 V of derating headroom above a typical 600 V rail, which matters when reflected voltage spikes push the drain above the nominal bus.
95 mOhm Rds(on) and 45 nC gate charge — conduction and switching budget
At 24 A continuous drain current (Tc = 25°C), conduction loss at full load is I²R = 24² × 0.095 ≈ 55 W, which sits within the 128 W power dissipation rating at the case — but real-world operation at elevated ambient will require a heatsink sized to keep the junction below 150°C. The gate charge of 45 nC at 10 V is moderate for a 650 V FET; in a 100 kHz hard-switching converter the gate-drive power is Qg × Vgs × fsw = 45 nC × 10 V × 100 kHz = 45 mW, easily handled by a standard driver. The 2140 pF input capacitance at 400 V Vds is a typical figure for this Rds(on) class — expect the driver to source and sink a few amperes peak during the Miller plateau.
No last-time-buy window has been triggered, and no successor has been assigned — the part is the current-generation CoolMOS™ in this voltage and package combination.