Infineon OptiMOS™-5 IPZ40N04S5L7R4ATMA1, N-Channel MOSFET, 40V Vdss, 40A Id, 7.4mOhm Rds(on) @ 20A/10V, 17nC Qg, PG-TSDSON-8, AEC-Q101 automotive grade.
| Parameter | Value |
|---|---|
| Series | OptiMOS™-5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 34W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerVDFN |
| Vgs(th) (Max) @ id | 2V @ 10µA |
| Rds on (Max) @ id, vgs | 7.4mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 17 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 920 pF @ 25 V |
The gate charge is 17 nC at 10 V. The input capacitance is 920 pF at 25 V drain-source, and the device can be driven with logic-level gate voltages down to 4.5 V, though the specified Rds(on) is guaranteed at 10 V.
The 8-PowerVDFN package (PG-TSDSON-8 supplier device package) is a surface-mount, exposed-paddle design.
ROHS3 compliant.
Maximum Rds(on) is 7.4 mOhm at 20 A drain current with 10 V gate drive. That is the guaranteed upper limit at 25 °C junction temperature; actual on-resistance increases with temperature per the normalized curve in the datasheet.
Yes, the part is AEC-Q101 qualified and carries an Automotive grade designation. This means it is released for production in automotive applications with PPAP documentation available through the supply chain.
Total gate charge is 17 nC at 10 V gate drive. This is the charge required to switch the device on and off, and it directly sets the average gate-driver current for a given switching frequency.