AEC-Q101 qualification — the gate for production automotive BOMs
This part is AEC-Q101 qualified, the automotive-grade reliability standard for discrete semiconductors. The active lifecycle status means Infineon continues to manufacture the IPZ40N04S5L4R8ATMA1 with no announced last-time-buy or end-of-life notice. For a BOM line in a current-production vehicle program, this removes the supply-risk flag that an NRND or EOL part would carry.
Conduction loss and gate drive — 4.8 mOhm at 10 V, 29 nC gate charge
The 4.8 mOhm Rds(on) is specified at 20 A drain current with 10 V gate drive — the typical operating point for a 40 A-rated FET in a 12 V system. At 40 A load, the I²R conduction loss reaches about 7.7 W, which the 48 W package power dissipation capability handles with appropriate PCB copper area and thermal vias under the exposed pad of the PG-TSDSON-8 package. Gate charge Qg is 29 nC at 10 V — moderate for a 40 A device. A standard gate driver sourcing 1 A can switch the FET in about 29 ns, keeping switching losses manageable up to several hundred kHz. The 1560 pF input capacitance at 25 V drain-source confirms the driver load is within the range of common automotive gate-driver ICs. The drive voltage range spans 4.5 V to 10 V, meaning the FET can be driven from a 5 V logic-level gate signal (with reduced Rds(on) performance) or from a 10 V rail for minimum on-resistance. The ±16 V maximum gate-source rating provides margin against gate overvoltage transients common in automotive environments.
PG-TSDSON-8 package — footprint and thermal design
The 8-PowerVDFN package (Infineon designation PG-TSDSON-8) is a surface-mount power package with an exposed metal pad on the bottom side. Without adequate thermal management, the 48 W maximum power dissipation cannot be sustained — the actual thermal performance depends on the PCB layout, not just the package rating. At the high end, the Rds(on) approximately doubles from its 25 °C value — a factor that must be included in the worst-case conduction loss calculation for the BOM.
