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Infineon Technologies IPZ40N04S5L4R8ATMA1

IPZ40N04S5L4R8ATMA1 Infineon OptiMOS-5 N-Ch MOSFET, 40 V

MPNIPZ40N04S5L4R8ATMA1
End of Life

Infineon OptiMOS™-5, N-Channel MOSFET, Automotive Grade, 40 V drain-source, 40 A continuous drain, 4.8 mOhm Rds(on) at 20 A, 10 V, PG-TSDSON-8 package, AEC-Q101 qualified, -55 to 175 °C junction.

$0.94Ref. price · indicative, final on quote
Packaging8-PowerVDFN
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPZ40N04S5L4R8ATMA1 Technical Specifications
ParameterValue
SeriesOptiMOS™-5
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C40A (Tc)
Power dissipation48W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
GradeAutomotive
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
Case8-PowerVDFN
Vgs(th) (Max) @ id2V @ 17µA
Rds on (Max) @ id, vgs4.8mOhm @ 20A, 10V
Gate charge (Qg) (Max) @ vgs29 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1560 pF @ 25 V

Product details

AEC-Q101 qualification — the gate for production automotive BOMs

This part is AEC-Q101 qualified, the automotive-grade reliability standard for discrete semiconductors. The active lifecycle status means Infineon continues to manufacture the IPZ40N04S5L4R8ATMA1 with no announced last-time-buy or end-of-life notice. For a BOM line in a current-production vehicle program, this removes the supply-risk flag that an NRND or EOL part would carry.

Conduction loss and gate drive — 4.8 mOhm at 10 V, 29 nC gate charge

The 4.8 mOhm Rds(on) is specified at 20 A drain current with 10 V gate drive — the typical operating point for a 40 A-rated FET in a 12 V system. At 40 A load, the I²R conduction loss reaches about 7.7 W, which the 48 W package power dissipation capability handles with appropriate PCB copper area and thermal vias under the exposed pad of the PG-TSDSON-8 package. Gate charge Qg is 29 nC at 10 V — moderate for a 40 A device. A standard gate driver sourcing 1 A can switch the FET in about 29 ns, keeping switching losses manageable up to several hundred kHz. The 1560 pF input capacitance at 25 V drain-source confirms the driver load is within the range of common automotive gate-driver ICs. The drive voltage range spans 4.5 V to 10 V, meaning the FET can be driven from a 5 V logic-level gate signal (with reduced Rds(on) performance) or from a 10 V rail for minimum on-resistance. The ±16 V maximum gate-source rating provides margin against gate overvoltage transients common in automotive environments.

PG-TSDSON-8 package — footprint and thermal design

The 8-PowerVDFN package (Infineon designation PG-TSDSON-8) is a surface-mount power package with an exposed metal pad on the bottom side. Without adequate thermal management, the 48 W maximum power dissipation cannot be sustained — the actual thermal performance depends on the PCB layout, not just the package rating. At the high end, the Rds(on) approximately doubles from its 25 °C value — a factor that must be included in the worst-case conduction loss calculation for the BOM.

Frequently asked questions

Is IPZ40N04S5L4R8ATMA1 automotive qualified?

Yes, the IPZ40N04S5L4R8ATMA1 is AEC-Q101 qualified, which is the automotive-grade reliability standard for discrete semiconductors. This qualification is required for use in production automotive ECUs, ADAS modules, and other vehicle-mounted electronics.