On-resistance and gate charge — switching loss trade-off
The drive voltage range is specified for 7 V (minimum Rds(on)) and 10 V (maximum Rds(on)), so a 10 V gate rail is the recommended drive level to achieve the rated on-resistance.
IPZ40N04S58R4ATMA1
Infineon Technologies · OptiMOS™-5 Series
Infineon OptiMOS™-5 IPZ40N04S58R4ATMA1, N-Channel MOSFET, 40 V Vds, 40 A Id, 8.4 mOhm Rds(on) at 20 A, 10 V, PG-TSDSON-8-32 package, AEC-Q101 qualified, -55°C to 175°C junction temperature.
[IN STOCK] In Stock: 64 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | OptiMOS™-5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 7V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 34W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.4V @ 10µA |
| Rds on (Max) @ id, vgs | 8.4mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 771 pF @ 25 V |
Technical details
IPZ40N04S58R4ATMA1
[ALLOC] verified