On-resistance and gate charge — switching loss trade-off
The drive voltage range is specified for 7 V (minimum Rds(on)) and 10 V (maximum Rds(on)), so a 10 V gate rail is the recommended drive level to achieve the rated on-resistance.
Infineon IPZ40N04S58R4ATMA1 N-Channel MOSFET, 40 V, 40 A
MPNIPZ40N04S58R4ATMA1
End of Life
Infineon OptiMOS™-5 IPZ40N04S58R4ATMA1, N-Channel MOSFET, 40 V Vds, 40 A Id, 8.4 mOhm Rds(on) at 20 A, 10 V, PG-TSDSON-8-32 package, AEC-Q101 qualified, -55°C to 175°C junction temperature.
$0.91Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesOptiMOS™-5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | OptiMOS™-5 |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 7V, 10V |
| Current - continuous drain (Id) @ 25°C | 40A (Tc) |
| Power dissipation | 34W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.4V @ 10µA |
| Rds on (Max) @ id, vgs | 8.4mOhm @ 20A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13.7 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 771 pF @ 25 V |
Product details
Frequently asked questions
Is IPZ40N04S58R4ATMA1 suitable for automotive applications?
Yes. The 40 V drain-source rating provides margin on 12 V and 24 V automotive buses.
Is IPZ40N04S58R4ATMA1 a direct replacement for IPZ40N04S58R4?
The order code IPZ40N04S58R4ATMA1 is the standard suffix variant of the base part number IPZ40N04S58R4. The ATMA1 suffix indicates the specific packaging and reel configuration. No functional difference is expected, but confirm the package code and reel quantity against your BOM before substituting.