Infineon CoolMOS™ CFD7A, N-Channel MOSFET, 650 V Vdss, 32 A continuous drain, 75 mOhm Rds(on) at 10 V, 68 nC gate charge, TO-247-3 through-hole package, AEC-Q101 qualified, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101, CoolMOS™ CFD7A |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 32A (Tc) |
| Power dissipation | 171W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.5V @ 820µA |
| Rds on (Max) @ id, vgs | 75mOhm @ 16.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3288 pF @ 400 V |
The IPWS65R075CFD7AXKSA1 is an N-channel 650 V, 32 A CoolMOS CFD7A MOSFET with AEC-Q101 qualification.
The CoolMOS CFD7A series is Infineon's established automotive high-voltage MOSFET platform, so supply continuity is tied to a mature product line, not a niche variant.
The IPWS65R075CFD7AXKSA1 and IPW65R075CFD7A share the same CoolMOS CFD7A technology, 650 V Vdss, 32 A drain current, and 75 mOhm Rds(on). The key difference is the package suffix — the IPWS variant uses the PG-TO247-3-41 package variant. The lead frame and backside tab dimensions are identical to the standard TO-247-3 footprint, so the part is a drop-in replacement on the PCB. Pin 1 (gate), pin 2 (drain), and pin 3 (source) assignments are the same across the TO-247-3 package family. The AEC-Q101 qualification is identical.
The part is qualified to AEC-Q101, the automotive stress-test qualification for discrete semiconductors. This covers the full suite of reliability tests: high-temperature reverse bias (HTRB), high-temperature gate bias (HTGB), temperature cycling, power cycling, and autoclave.