Infineon CoolMOS™ IPW90R500C3XKSA1, N-Channel MOSFET, 900 V Vdss, 11 A Id, 500 mOhm Rds(on) at 10 V, 68 nC Qg, PG-TO247-3-21, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11A (Tc) |
| Power dissipation | 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.5V @ 740µA |
| Rds on (Max) @ id, vgs | 500mOhm @ 6.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 68 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1700 pF @ 100 V |
Through-hole TO-247-3 package (PG-TO247-3-21) with a 156 W power dissipation limit at case temperature. The TO-247 tab is the drain — the mounting hole and large copper pad area on the PCB or heatsink set the junction-to-case thermal resistance.
ROHS3 compliant.
Drain-source voltage rating is 900 V. Maximum on-resistance is 500 mOhm at 6.6 A drain current with 10 V gate drive.
The IPW90R500C3XKSA1 is the standard suffix variant of the IPW90R500C3 base part number in the CoolMOS C3 family. The suffix indicates packaging and reel format differences — the die, ratings, and TO-247-3 package are identical. Confirm the specific suffix requirements for your BOM position before substituting.