Infineon CoolMOS CFD2™ N-Channel MOSFET, 650 V Vdss, 11.4 A continuous drain, 310 mOhm Rds(on) at 10 V, 41 nC gate charge, TO-247-3 through-hole, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS CFD2™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 11.4A (Tc) |
| Power dissipation | 104.2W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.5V @ 440µA |
| Rds on (Max) @ id, vgs | 310mOhm @ 4.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 41 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1100 pF @ 100 V |
The IPW65R310CFD: At 4.4 A and 10 V, maximum on-resistance is 310 mOhm. 10 V drive voltage achieves rated Rds(on).
Gate charge 41 nC at 10 V. Input capacitance 1100 pF at 100 V drain-source.
TO-247-3 through-hole package, PG-TO247 outline. 104.2 W maximum power dissipation at case temperature.
Active product status. ROHS3 compliant.
No, the IPW65R310CFD is Active on Infineon's product status.
Yes, the IPW65R310CFD is ROHS3 compliant per Infineon's current compliance status.
The IPW65R310CFD is part of Infineon's CoolMOS CFD2 series. For a pin-compatible alternative within the same family, consider other 650 V CoolMOS CFD2 devices in TO-247-3 with similar Rds(on) ratings, such as the IPW65R190CFD or IPW65R420CFD, depending on your current and loss requirements. No official cross-reference is listed; verify the gate charge and Rds(on) match your design.