650 V CoolMOS C6 — what the ratings mean for your BOM
The Infineon IPW65R280C6 is a 650 V N-channel CoolMOS C6 power MOSFET in a TO-247-3 through-hole package. It is designed for hard-switching topologies in power supplies, PFC stages, and industrial converters where low conduction and switching losses are required. The 280 mOhm Rds(on) at 10 V gate drive and 45 nC gate charge keep the dissipation manageable in a 104 W package, and the -55°C to 150°C junction temperature range suits outdoor telecom cabinets and motor-drive environments.
Gate charge and switching loss — the real driver for high-frequency designs
At 45 nC total gate charge at 10 V, this MOSFET demands modest drive current. The 950 pF input capacitance at 100 V drain-source confirms the gate charge figure.
Active lifecycle — no LTB risk, no successor to track
The IPW65R280C6 carries an Active product status. For a BOM freeze, this part does not trigger a PCN watch — no last-time-buy deadline to manage.
Mounting and thermal — TO-247-3 through-hole
The PG-TO247-3-41 package is a standard TO-247 with a 3-pin lead form. The backside drain tab requires a thermal pad or grease to the heatsink; the 104 W dissipation at case temperature assumes good thermal contact. Through-hole mounting suits point-of-load stages where vibration resistance matters more than board density.