650 V, 150 mOhm N-channel — TO-247 for high-power switching
The Infineon IPW65R150CFDFKSA2 is a 650 V, 22.4 A N-channel MOSFET from the CoolMOS™ series, built on a charge-compensation superjunction structure.
Gate charge and switching-speed budget
Total gate charge Qg is 86 nC at 10 V. Input capacitance Ciss is 2340 pF at 100 V drain bias.
Temperature range and ruggedness
The 4.5 V maximum gate threshold at 900 µA drain current means the device turns on cleanly with a standard 10 V gate drive — no need for a negative rail in most hard-switched topologies. The ±20 V gate-source maximum gives headroom for ringing on the gate node in a fast-switching layout.
Lifecycle and sourcing posture
It is RoHS3 compliant.