Infineon CoolMOS™ CFD2 series, N-Channel MOSFET, 650 V drain-source, 22.4 A continuous drain, 150 mOhm Rds(on) at 10 V gate drive, TO-247-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ CFD2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 22.4A (Tc) |
| Power dissipation | 195.3W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.5V @ 900µA |
| Rds on (Max) @ id, vgs | 150mOhm @ 9.3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 86 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2340 pF @ 100 V |
Total gate charge Qg is 86 nC at 10 V. Input capacitance Ciss is 2340 pF at 100 V drain bias.
The ±20 V gate-source maximum gives headroom for ringing on the gate node in a fast-switching layout.
It is RoHS3 compliant.
Yes, the IPW65R150CFDFKSA2 is RoHS3 compliant.