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Infineon Technologies IPW65R150CFDAFKSA1

Infineon IPW65R150CFDAFKSA1 CoolMOS N-Ch MOSFET, 650V 22.4A

MPNIPW65R150CFDAFKSA1
End of Life

Infineon CoolMOS™ IPW65R150CFDAFKSA1, N-Channel MOSFET, 650 V Vdss, 22.4 A Id, 150 mOhm Rds(on) at 10 V, PG-TO247-3 through-hole, Automotive grade, AEC-Q101 qualified, -40 to 150 °C junction.

$6.03Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPW65R150CFDAFKSA1 specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C22.4A (Tc)
Power dissipation195.3W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
GradeAutomotive
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 900µA
Rds on (Max) @ id, vgs150mOhm @ 9.3A, 10V
Gate charge (Qg) (Max) @ vgs86 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2340 pF @ 100 V

Product details

650 V, 150 mOhm — the conduction-loss anchor for automotive power stages

That number drives the heatsink selection and the thermal interface budget.

AEC-Q101 and 150°C junction — what the automotive grade buys you

Gate drive and switching — 86 nC at 10 V

At 100 kHz, the average gate-drive current is 8.6 mA; the peak current depends on the driver's output resistance and the external gate resistor. The ±20 V maximum gate-source rating gives margin for ringing on long gate traces, but the 4.5 V maximum threshold at 900 µA drain means the device is fully off below 4.5 V — a 5 V logic-level drive will not fully enhance it.

Frequently asked questions

What is the Rds(on) of IPW65R150CFDAFKSA1?

The maximum on-resistance is 150 mOhm at a drain current of 9.3 A and a gate-source voltage of 10 V.

Is IPW65R150CFDAFKSA1 RoHS compliant?

Yes, it is ROHS3 compliant.