80 mOhm Rds(on) and 167 nC gate charge — the trade-off
The IPW65R080CFDFKSA2: The 80 mOhm figure is the conduction-loss floor at 25 °C junction; at 125 °C junction it roughly doubles, so budget the thermal loop with that headroom. The 167 nC total gate charge at 10 V tells you this isn't a part you drive from a GPIO or a weak bootstrap diode — plan for a dedicated gate driver that can source and sink several amperes peak to hit the target switching speed without dwelling in the linear region. Input capacitance Ciss is 5030 pF at 100 V drain bias — the Miller plateau will be substantial, so the driver's sink current and the gate loop inductance determine the turn-off loss more than the Rds(on) does.
Active production — no scavenger hunt needed
It is ROHS3 compliant, and the TO-247-3 through-hole package suits high-reliability soldering processes and field-serviceable power stages where a rework station is the norm.
Package and mounting
The 650 V Vdss gives you 1.6× derating on a 400 V DC bus — enough margin for the ringing on a hard-switched half-bridge without reaching for a 700 V or 800 V part that would have higher Rds(on). The 391 W power dissipation at case temperature is the theoretical limit with an infinite heatsink — in practice the thermal pad area and airflow set the real ceiling.