Skip to main content
Infineon Technologies IPW65R080CFDAFKSA1

Infineon IPW65R080CFDAFKSA1 CoolMOS N-Ch 650V 43.3A TO-247

MPNIPW65R080CFDAFKSA1
End of Life

Infineon CoolMOS™ IPW65R080CFDAFKSA1, N-Channel MOSFET, 650 V Vdss, 43.3 A Id, 80 mOhm Rds(on) at 10 V, TO-247-3, AEC-Q101, -40°C to 150°C junction.

$11.64Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPW65R080CFDAFKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C43.3A (Tc)
Power dissipation391W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
GradeAutomotive
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 1.76mA
Rds on (Max) @ id, vgs80mOhm @ 17.6A, 10V
Gate charge (Qg) (Max) @ vgs161 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4440 pF @ 100 V

Product details

Gate charge and switching losses — 161 nC at 10 V

Total gate charge is 161 nC at 10 V gate drive, which sets the gate-driver current requirement: at a 100 kHz switching frequency, the average gate drive current is 16.1 mA, well within the capability of most automotive gate-driver ICs. Input capacitance Ciss is 4440 pF at 100 V drain-source — a moderate value that keeps the Miller plateau short enough for efficient hard-switching up to several tens of kilohertz without excessive driver losses.

Package and thermal management — TO-247-3 (PG-TO247-3)

The TO-247-3 through-hole package (supplier device package PG-TO247-3) allows for a large copper tab area on the PCB or direct heatsink mounting, supporting the 391 W maximum power dissipation at case temperature when properly heatsunk. The gate threshold voltage is 4.5 V maximum at 1.76 mA drain current, and the recommended drive voltage for minimum on-resistance is 10 V — a standard logic-level gate drive will not fully enhance this device.

Lifecycle and compliance — active, ROHS3, automotive grade

ROHS3 compliant and AEC-Q101 qualified, meeting the material and reliability requirements for automotive BOMs.

Frequently asked questions

Is IPW65R080CFDAFKSA1 AEC-Q101 qualified?

Yes, the IPW65R080CFDAFKSA1 is AEC-Q101 qualified, making it suitable for automotive applications including powertrain, chassis, and safety systems.

Is IPW65R080CFDAFKSA1 RoHS compliant?

Yes, the IPW65R080CFDAFKSA1 is ROHS3 compliant.