Infineon Technologies · CoolMOS™ C7 Series
Infineon CoolMOS™ C7 series, IPW65R065C7XKSA1, N-Channel MOSFET, 650 V Vdss, 33 A continuous drain, 65 mOhm Rds(on) at 10 V gate drive, 64 nC gate charge, TO-247-3 through-hole package, -55 to 150 °C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | CoolMOS™ C7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 33A (Tc) |
| Power dissipation | 171W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 850µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 17.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 64 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3020 pF @ 400 V |
A 64 nC Qg at 10 V is low for a 650 V die that can carry 33 A. The 3020 pF input capacitance at 400 V is a datasheet number to plug into your gate-driver sizing calculation.
The TO-247-3 package needs a drilled PCB and a screw or spring clip to the heatsink. The PG-TO247-3 supplier device code tells you the lead form is the standard TO-247 outline.
ROHS3 compliance is confirmed.
