Skip to main content
Infineon Technologies IPW65R048CFDAFKSA1

IPW65R048CFDAFKSA1 CoolMOS N-Ch 650V 63.3A TO-247-3

MPNIPW65R048CFDAFKSA1
End of Life

Infineon CoolMOS™ IPW65R048CFDAFKSA1, N-Channel MOSFET, 650 V Vdss, 63.3 A Id, 48 mOhm Rds(on) at 10 V, 270 nC Qg, TO-247-3, -40°C to 150°C, AEC-Q101 automotive grade.

$17.19Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPW65R048CFDAFKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C63.3A (Tc)
Power dissipation500W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
GradeAutomotive
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
QualificationAEC-Q101
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 2.9mA
Rds on (Max) @ id, vgs48mOhm @ 29.4A, 10V
Gate charge (Qg) (Max) @ vgs270 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds7440 pF @ 100 V

Product details

Gate charge and switching loss budget

The IPW65R048CFDAFKSA1: Total gate charge is 270 nC at 10 V gate drive. The 7440 pF input capacitance at 100 V drain bias confirms the Ciss-driven switching speed.

Package and thermal interface

The TO-247-3 through-hole package (PG-TO247-3 supplier device package,) provides a large copper tab for heatsink mounting — the 500 W power dissipation rating assumes the case is held at 25 °C. In a real automotive enclosure with forced air or liquid cooling, the junction-to-case thermal resistance from the datasheet determines the required heatsink performance. The ±20 V maximum gate-source rating is standard for CoolMOS; the gate threshold is 4.5 V maximum at 2.9 mA drain current, so a 10 V gate drive rail delivers full enhancement with margin.

Frequently asked questions

Is IPW65R048CFDAFKSA1 RoHS compliant?

Yes, the IPW65R048CFDAFKSA1 is listed as ROHS3 compliant. No separate lead-free option is needed.