Gate charge and switching loss budget
The IPW65R048CFDAFKSA1: Total gate charge is 270 nC at 10 V gate drive. The 7440 pF input capacitance at 100 V drain bias confirms the Ciss-driven switching speed.
Package and thermal interface
The TO-247-3 through-hole package (PG-TO247-3 supplier device package,) provides a large copper tab for heatsink mounting — the 500 W power dissipation rating assumes the case is held at 25 °C. In a real automotive enclosure with forced air or liquid cooling, the junction-to-case thermal resistance from the datasheet determines the required heatsink performance. The ±20 V maximum gate-source rating is standard for CoolMOS; the gate threshold is 4.5 V maximum at 2.9 mA drain current, so a 10 V gate drive rail delivers full enhancement with margin.
