In a real automotive enclosure with forced air or liquid cooling, the junction-to-case thermal resistance from the datasheet determines the required heatsink performance. The ±20 V maximum gate-source rating is standard for CoolMOS; the gate threshold is 4.5 V maximum at 2.9 mA drain current, so a 10 V gate drive rail delivers full enhancement with margin.
IPW65R048CFDAFKSA1 CoolMOS N-Ch 650V 63.3A TO-247-3
MPNIPW65R048CFDAFKSA1
End of Life
Infineon CoolMOS™ IPW65R048CFDAFKSA1, N-Channel MOSFET, 650 V Vdss, 63.3 A Id, 48 mOhm Rds(on) at 10 V, 270 nC Qg, TO-247-3, -40°C to 150°C, AEC-Q101 automotive grade.
$17.19Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesCoolMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 63.3A (Tc) |
| Power dissipation | 500W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.5V @ 2.9mA |
| Rds on (Max) @ id, vgs | 48mOhm @ 29.4A, 10V |
| Gate charge (Qg) (Max) @ vgs | 270 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7440 pF @ 100 V |
Product details
Frequently asked questions
Is IPW65R048CFDAFKSA1 RoHS compliant?
Yes, the IPW65R048CFDAFKSA1 is listed as ROHS3 compliant. No separate lead-free option is needed.