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Infineon Technologies IPW65R041CFDFKSA2
Infineon Technologies

Infineon IPW65R041CFDFKSA2 CoolMOS™ CFD2 N-Ch MOSFET, 650V

MPNIPW65R041CFDFKSA2
End of Life

Infineon CoolMOS™ CFD2, N-Channel MOSFET, 650 V Vdss, 68.5 A Id, 41 mOhm Rds(on) @ 33.1 A 10 V, 300 nC Qg, TO-247-3, -55°C to 150°C TJ.

$14.19Ref. price · indicative, final on quote
IPW65R041CFDFKSA2 datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IPW65R041CFDFKSA2 Technical Specifications
ParameterValue
SeriesCoolMOS™ CFD2
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C68.5A (Tc)
Power dissipation500W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 3.3mA
Rds on (Max) @ id, vgs41mOhm @ 33.1A, 10V
Gate charge (Qg) (Max) @ vgs300 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds8400 pF @ 100 V

Product details

Gate charge and switching — what the 300 nC Qg means for the driver

The IPW65R041CFDFKSA2: Total gate charge is 300 nC at 10 V Vgs. The 8400 pF input capacitance at 100 V Vds reinforces the need for a low-impedance drive loop.

Package and thermal — TO-247-3 through-hole mounting

The TO-247-3 (PG-TO247-3) through-hole package is rated for 500 W power dissipation at the case. The large tab and mounting hole accept a heatsink; the thermal pad area and airflow set the real junction-to-ambient resistance.

It is ROHS3 compliant.

Frequently asked questions

Is IPW65R041CFDFKSA2 obsolete?

No.

What is the equivalent of IPW65R041CFDFKSA2?

No official direct replacement is listed. The IPD50R950CEAUMA1 is a CoolMOS™ CE device rated at 500 V and 950 mOhm — a lower-voltage, higher-resistance part that is not a functional substitute for the 650 V, 41 mOhm CFD2.

Can I replace IRFP460 with IPW65R041CFDFKSA2?

The IRFP460 is a 500 V, 0.4 Ohm planar MOSFET in TO-247. The IPW65R041CFDFKSA2 offers a higher voltage rating (650 V) and significantly lower on-resistance (41 mOhm). Pin-compatible in TO-247-3, but the gate charge and switching characteristics differ — verify the gate drive circuit and switching losses before substitution.