650 V, 83.2 A — the power-stage workhorse
IPW65R037C6FKSA1 is a 650 V, 83.2 A N-channel MOSFET in a TO-247-3 through-hole package for bolted-down heatsink mounting.
Gate charge and switching losses
Total gate charge is 330 nC at 10 V. Input capacitance is 7240 pF at 100 V drain-source.
Maximum power dissipation is 500 W at case temperature — real-world dissipation is derated by the heatsink thermal resistance and ambient temperature. The TO-247-3 package's large tab area couples efficiently to a heatsink; the 150 °C junction limit is the hard ceiling for thermal design.