Infineon Technologies · Automotive, AEC-Q101, CoolMOS™ CFD7A Series
Infineon CoolMOS™ CFD7A, N-Channel MOSFET, 650 V Vdss, 63 A Id, 35 mOhm Rds(on) @ 35.8 A, 10 V, PG-TO247-3-41, AEC-Q101, -40°C to 150°C TJ.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | Automotive, AEC-Q101, CoolMOS™ CFD7A |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 63A (Tc) |
| Power dissipation | 305W (Tc) |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.5V @ 1.79mA |
| Rds on (Max) @ id, vgs | 35mOhm @ 35.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 145 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 7149 pF @ 400 V |
The IPW65R035CFD7AXKSA1: Total gate charge Qg is 145 nC at 10 V. Input capacitance Ciss is 7149 pF at 400 V Vds.
The PG-TO247-3-41 package is a through-hole TO-247 variant with a 3-pin leadform. The through-hole leads handle the 63 A drain current without the PCB trace-width constraints of a surface-mount package.
This part is qualified for new design-in and volume production ramp without obsolescence risk. ROHS3 compliance is confirmed.
