600 V, 23.8 A N-channel — the CoolMOS P6 sweet spot for hard-switching
The IPW60R160P6FKSA1: Through-hole TO-247-3 package (PG-TO247-3). For a 600 V part, the 44 nC typical gate charge at 10 V means the gate driver sees a moderate capacitive load.
160 mOhm Rds(on) — conduction loss at 9 A continuous
At 9 A drain current and 10 V gate drive, the maximum on-resistance is 160 mOhm. At 25°C junction that translates to about 13 W conduction loss at 9 A — well within the 176 W power dissipation rating at the case. The actual junction temperature in a 50°C ambient with a reasonable heatsink stays under 125°C, leaving margin for the 150°C absolute maximum. The 2080 pF input capacitance at 100 V drain-source is typical for this die size. It sets the driver's dynamic current demand during turn-on: at 100 kHz switching, the gate driver must supply roughly 4.4 mA average to charge and discharge Ciss each cycle.
Active production and compliance
It is ROHS3 compliant, meeting the current EU restriction on hazardous substances. The TO-247-3 through-hole package is widely stocked and does not require reflow profile qualification. No stock-holding claim is made; the supply posture is quoted per BOM quantity.