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Infineon Technologies IPW60R160P6FKSA1

Infineon IPW60R160P6FKSA1 CoolMOS P6 N-Ch MOSFET

MPNIPW60R160P6FKSA1
End of Life

Infineon CoolMOS™ P6 series, N-Channel MOSFET, 600 V drain-source, 23.8 A continuous drain, 160 mOhm on-resistance at 10 V gate drive, 44 nC gate charge, TO-247-3 through-hole package, -55 to 150 °C junction temperature.

$4.39Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesCoolMOS™ P6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPW60R160P6FKSA1 specifications
ParameterValue
SeriesCoolMOS™ P6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C23.8A (Tc)
Power dissipation176W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 750µA
Rds on (Max) @ id, vgs160mOhm @ 9A, 10V
Gate charge (Qg) (Max) @ vgs44 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds2080 pF @ 100 V

Product details

600 V, 23.8 A N-channel — the CoolMOS P6 sweet spot for hard-switching

The IPW60R160P6FKSA1: Through-hole TO-247-3 package (PG-TO247-3).

At 25°C junction that translates to about 13 W conduction loss at 9 A — well within the 176 W power dissipation rating at the case. The actual junction temperature in a 50°C ambient with a reasonable heatsink stays under 125°C, leaving margin for the 150°C absolute maximum. It sets the driver's dynamic current demand during turn-on: at 100 kHz switching, the gate driver must supply roughly 4.4 mA average to charge and discharge Ciss each cycle.

The TO-247-3 through-hole package is widely stocked and does not require reflow profile qualification. No stock-holding claim is made; the supply posture is quoted per BOM quantity.

Frequently asked questions

Is IPW60R160P6FKSA1 RoHS compliant?

Yes. It is listed as ROHS3 compliant, meeting the current EU RoHS directive.