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Infineon Technologies IPW60R125CFD7XKSA1

Infineon IPW60R125CFD7XKSA1 N-Channel MOSFET, 600 V, 18 A

MPNIPW60R125CFD7XKSA1
End of Life

Infineon OptiMOS IPW60R125CFD7XKSA1, N-channel MOSFET, 600 V drain-source, 125 mOhm Rds(on) at 10 V, 18 A continuous drain, TO-247-3 through-hole package, -55°C to 150°C junction temperature.

$5.3Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesOptiMOS™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPW60R125CFD7XKSA1 specifications
ParameterValue
SeriesOptiMOS™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C18A (Tc)
Power dissipation92W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 390µA
Rds on (Max) @ id, vgs125mOhm @ 7.8A, 10V
Gate charge (Qg) (Max) @ vgs36 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1503 pF @ 400 V

Product details

600 V, 125 mOhm, 18 A — the hard-switching workhorse

The IPW60R125CFD7XKSA1: This is a hard-switching-optimised device from the OptiMOS CFD7 series, built for the primary side of switch-mode power supplies, PFC boost stages, and motor-drive inverters. The 600 V rating gives you 80 % derating margin on a 400 V DC bus, which is the standard headroom for flyback and half-bridge topologies.

Total gate charge Qg is 36 nC at 10 V drive. Input capacitance Ciss is 1503 pF at 400 V drain-source, which sets the Miller plateau duration and the cross-conduction window in a half-bridge. Gate threshold voltage Vgs(th) is 4.5 V maximum at 390 µA drain current. That 4.5 V ceiling means a 10 V gate drive rail gives you a solid 5.5 V overdrive, pulling Rds(on) down to the rated 125 mOhm. Do not try to run this part on 5 V logic — the margin is too thin and conduction loss climbs fast.

Thermal and mechanical — TO-247 through-hole reality

Maximum power dissipation is 92 W at case temperature Tc. The TO-247-3 package with a copper tab lets you bolt the device to a heatsink — the junction-to-case thermal path is the limiting factor, not the silicon. Mounting is through-hole into the TO-247-3 footprint.

Frequently asked questions

Is IPW60R125CFD7XKSA1 RoHS compliant?

Yes, the part is ROHS3 compliant per the Infineon product status. No RoHS exemption is needed for EU or UK market placement.