600 V, 70 mOhm — the conduction-loss anchor for a PFC or LLC stage
The IPW60R070P6XKSA1 is an Infineon CoolMOS P6 N-channel MOSFET in a TO-247-3 through-hole package. The 70 mOhm Rds(on) at 10 V gate drive is the key spec for conduction loss calculations in a 600 V-class switching supply.
Gate charge and switching — what 100 nC means for the driver
Total gate charge is 100 nC at 10 V gate drive. Input capacitance Ciss is 4750 pF at 100 V drain-source. This capacitance, together with the gate resistance and driver impedance, sets the turn-on and turn-off delay — factor it into the dead-time budget for a half-bridge topology. Gate threshold voltage is 4.5 V maximum at 1.72 mA drain current. A 10 V gate drive is recommended for the lowest Rds(on); the absolute maximum gate-source voltage is ±20 V.
Through-hole TO-247 — field-swappable with basic tools
The TO-247-3 through-hole package (PG-TO247-3) is a standard three-lead power package with a large metal tab for heatsink mounting. No hot-air station or reflow oven needed — a soldering iron and a screwdriver are all it takes to swap this part on site. Maximum power dissipation is 391 W at case temperature.