Infineon CoolMOS™ P7 series, N-Channel MOSFET, 650 V Vdss, 61 A Id, 45 mOhm Rds(on) at 10 V, TO-247-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 61A (Tc) |
| Power dissipation | 201W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 1.08mA |
| Rds on (Max) @ id, vgs | 45mOhm @ 22.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 90 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3891 pF @ 400 V |
Paired with 90 nC Qg, this part suits a 650 V bus: low enough on-resistance to keep I²R loss under a few watts at 20 A, yet not so low that the gate charge forces a high-current driver.
For a BOM freeze or a new power-stage qualification, this part does not carry obsolescence risk.
The PG-TO247-3-41 package is a standard TO-247 with three leads and a mounting hole for a screw or clip to the heatsink.
The maximum on-resistance is 45 mOhm at 22.5 A drain current with a 10 V gate drive.
The IPD50R950CEAUMA1 is a CoolMOS CE device, but it is a 500 V, 4.3 A, 950 mOhm surface-mount part — a different voltage, current, and package class. It is not a functional replacement for the 650 V, 61 A, 45 mOhm TO-247 IPW60R045P7XKSA1.