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Infineon Technologies IPW60R045P7XKSA1
Infineon Technologies

Infineon IPW60R045P7XKSA1 N-Channel MOSFET, 650V, 61A

MPNIPW60R045P7XKSA1
End of Life

Infineon CoolMOS™ P7 series, N-Channel MOSFET, 650 V Vdss, 61 A Id, 45 mOhm Rds(on) at 10 V, TO-247-3 through-hole package, -55°C to 150°C junction temperature.

$8.19Ref. price · indicative, final on quote
IPW60R045P7XKSA1 datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPW60R045P7XKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage650 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C61A (Tc)
Power dissipation201W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 1.08mA
Rds on (Max) @ id, vgs45mOhm @ 22.5A, 10V
Gate charge (Qg) (Max) @ vgs90 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3891 pF @ 400 V

Product details

Rds(on) and gate charge — the switching loss trade-off

The IPW60R045P7XKSA1: The 45 mOhm Rds(on) at 10 V determines conduction loss at the operating current. Paired with 90 nC Qg, this part suits a 650 V bus: low enough on-resistance to keep I²R loss under a few watts at 20 A, yet not so low that the gate charge forces a high-current driver.

Active production — no LTB risk for new designs

The IPW60R045P7XKSA1 carries an Active lifecycle status and is ROHS3 compliant. No end-of-life notice or last-time-buy window is on record. For a BOM freeze or a new power-stage qualification, this part does not carry obsolescence risk.

Through-hole mounting — thermal and mechanical fit

The PG-TO247-3-41 package is a standard TO-247 with three leads and a mounting hole for a screw or clip to the heatsink. The 201 W maximum power dissipation at case temperature assumes a thermal interface with adequate clamping force and a flat heatsink surface.

Frequently asked questions

What is the Rds(on) of IPW60R045P7XKSA1?

The maximum on-resistance is 45 mOhm at 22.5 A drain current with a 10 V gate drive.

What is the closest functional second-source for IPW60R045P7XKSA1?

The IPD50R950CEAUMA1 is a CoolMOS CE device, but it is a 500 V, 4.3 A, 950 mOhm surface-mount part — a different voltage, current, and package class. It is not a functional replacement for the 650 V, 61 A, 45 mOhm TO-247 IPW60R045P7XKSA1.