600 V CoolMOS with automotive-grade gate
The 45 mOhm typical on-resistance at 44 A and 10 V drive sets the conduction loss floor for high-efficiency switching stages. This part belongs to the CoolMOS family, Infineon's charge-compensation superjunction platform that delivers low Rds(on) per silicon area. The 190 nC total gate charge at 10 V Vgs gives the designer a concrete number for sizing the gate-drive supply and estimating switching losses at the target frequency.
On-resistance and switching charge
That 10 V drive voltage is the recommended rail for achieving the rated on-resistance; driving below 10 V leaves Rds(on) headroom on the table. Gate charge totals 190 nC at 10 V, with an input capacitance of 6800 pF at 100 V drain-source. The combination of moderate gate charge and low Rds(on) suits this part for hard-switching topologies like PFC boost stages and DC-DC converters in the 1 kW to 3 kW range.
Temperature envelope and power dissipation
Maximum power dissipation is 431 W at the case, but the real thermal limit depends on the heatsink and airflow — the junction-to-case thermal path is the constraint in a TO-247 package.
Active lifecycle and compliance
It is ROHS3 compliant, which clears the restriction-of-hazardous-substances gate for current-generation designs.