The Infineon IPW60R040C7XKSA1 is an N-channel power MOSFET rated for 600 V drain-source voltage and 50 A continuous drain current. It comes in a TO-247-3 through-hole package (PG-TO247-3). The 40 mOhm maximum on-resistance at 10 V gate drive and 107 nC typical gate charge place it in the fast-switching, low-conduction-loss tier — suited for hard-switching topologies like PFC stages, LLC converters, and high-voltage DC-DC stages in industrial power supplies, server PSUs, and EV charging infrastructure.
The 40 mOhm maximum on-resistance at 24.9 A and 10 V gate drive sets the conduction loss floor. The 227 W package limit (Tc) gives thermal headroom for a properly heatsinked design.
For a BOM freeze or new design, this part does not introduce obsolescence risk. If a second-source or cross-reference is needed, the portfolio includes functionally similar 600 V parts with different Rds(on) / Qg trade-offs — but no pin-compatible drop-in is listed in the official cross-reference data.