Infineon CoolMOS™ P7 series, N-Channel MOSFET, 650 V drain-source, 76 A continuous drain, 37 mOhm Rds(on) at 10 V, TO-247-3 through-hole package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 76A (Tc) |
| Power dissipation | 255W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4V @ 1.48mA |
| Rds on (Max) @ id, vgs | 37mOhm @ 29.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 121 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5243 pF @ 400 V |
The IPW60R037P7XKSA1: Total gate charge is 121 nC at 10 V gate drive, with an input capacitance of 5243 pF at 400 V drain-source.
The CoolMOS P7 series is Infineon's current-generation high-voltage MOSFET platform, so this part is specified into new designs without obsolescence risk.
The maximum on-resistance is 37 mOhm at 29.5 A drain current and 10 V gate drive. This is the figure to use for worst-case conduction loss calculations at 25 °C junction; actual Rds(on) rises with temperature per the normalised curve in the datasheet.
Within the CoolMOS P7 series, other 650 V TO-247 devices with different Rds(on) and current ratings exist, but a drop-in replacement requires confirming the same package and gate drive parameters.