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Infineon Technologies IPW60R037CSFDXKSA1
Infineon Technologies

Infineon IPW60R037CSFDXKSA1 CoolMOS CFSD N-Ch 600 V 54 A

MPNIPW60R037CSFDXKSA1
End of Life

Infineon CoolMOS™ CFSD, N-Channel MOSFET, IPW60R037CSFDXKSA1, 600 V Vdss, 54 A Id, 37 mOhm Rds(on) max @ 10 V, 136 nC Qg, PG-TO247-3, Through Hole, -55 to 150 °C.

$11.54Ref. price · indicative, final on quote
IPW60R037CSFDXKSA1 datasheet
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPW60R037CSFDXKSA1 Technical Specifications
ParameterValue
SeriesCoolMOS™ CFSD
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C54A (Tc)
Power dissipation245W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 1.63mA
Rds on (Max) @ id, vgs37mOhm @ 32.6A, 10V
Gate charge (Qg) (Max) @ vgs136 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5623 pF @ 400 V

Product details

600 V, 37 mOhm — the conduction-loss floor for a PFC or inverter stage

The IPW60R037CSFDXKSA1: The 37 mOhm Rds(on) at 32.6 A, 10 V sets the conduction-loss floor.

Through-hole TO-247 — built for the thermal and mechanical duty

The PG-TO247-3 through-hole package dissipates 245 W through the case. The tab area and pin pitch suit 600 V bus work.

Temperature range and switching reality

The 5623 pF input capacitance at 400 V drain-source demands a tight gate-driver loop. A 10-ohm gate resistor and a peak driver handle the Miller plateau.

Frequently asked questions

Is IPW60R037CSFDXKSA1 RoHS compliant?

Yes, it is listed as ROHS3 compliant.