Infineon CoolMOS™ series, N-Channel MOSFET, 500 V Drain to Source Voltage, 350mOhm @ 5.6A, 10V, 10A (Tc), Through Hole, TO-247-3, PG-TO247-3-21, -55°C ~ 150°C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 89W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.5V @ 370µA |
| Rds on (Max) @ id, vgs | 350mOhm @ 5.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1020 pF @ 100 V |
The Infineon IPW50R350CP is a 500 V N-channel power MOSFET from the CoolMOS series, in a through-hole TO-247-3 package.
At 350 mOhm max at 5.6 A and 10 V, conduction loss fits within the 89 W package dissipation limit.
The TO-247-3 package (PG-TO247-3-21) is a standard through-hole footprint.
The maximum on-resistance is 350 mOhm at 5.6 A drain current with a 10 V gate drive.
Yes, the part is ROHS3 compliant.
It is a standard TO-247-3 package: gate, drain, source from left to right when the tab faces away from you.