Infineon CoolMOS™ series, IPW50R299CP, N-Channel MOSFET, 500 V drain-source, 12 A continuous drain current, 299 mOhm Rds(on) at 10 V gate drive, 31 nC gate charge, TO-247-3 through-hole package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 12A (Tc) |
| Power dissipation | 104W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.5V @ 440µA |
| Rds on (Max) @ id, vgs | 299mOhm @ 6.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 31 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1190 pF @ 100 V |
The TO-247-3 through-hole package (Infineon code PG-TO247-3-21) provides a large tab for heatsink mounting and suits wave-solder assembly.
No last-time-buy or end-of-life notice is in effect, so the part can be qualified into new designs and production BOMs without near-term obsolescence risk.
Yes, the part is ROHS3 compliant.