Infineon CoolMOS™ N-Channel MOSFET, 500 Vdss, 18.1 A continuous drain, 280 mOhm Rds(on) at 13 V gate drive, 32.6 nC gate charge, TO-247-3 through-hole package, -55 to 150 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 500 V |
| Drive voltage (Max rds on, min rds on) | 13V |
| Current - continuous drain (Id) @ 25°C | 18.1A (Tc) |
| Power dissipation | 119W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 3.5V @ 350µA |
| Rds on (Max) @ id, vgs | 280mOhm @ 4.2A, 13V |
| Gate charge (Qg) (Max) @ vgs | 32.6 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 773 pF @ 100 V |
The IPW50R280CE: The TO-247-3 through-hole package (PG-TO247-3-41) is the standard three-lead power package for this class — easy to heatsink, straightforward to hand-replace on a repair bench, and the 119 W power dissipation rating (Tc) gives a realistic thermal budget when bolted to a proper heatsink.
Listed as Active in the production lifecycle, so no last-time-buy scramble. The IPW50R280CE is ROHS3 compliant.
Within the same CoolMOS™ 500 V TO-247 family, parts with different Rds(on) and current ratings exist (e.g., lower Rds(on) for higher current, or higher Rds(on) for cost-optimized designs). Pin-compatibility across the TO-247-3 footprint is standard, but the gate charge and threshold differ — verify the gate-drive margin before swapping.
Yes — the 500 V drain-source rating, 32.6 nC gate charge, and 280 mOhm Rds(on) make it a natural fit for 400 V bus PFC, flyback, and LLC resonant converters in the 100–300 W range.
ROHS3 compliant.