Infineon CoolMOS™ P7 series, IPU95R450P7AKMA1, N-Channel MOSFET, 950V Vdss, 14A Id, 450mOhm Rds(on), 35nC gate charge, PG-TO251-3 through-hole package, -55°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ P7 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 950 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 14A (Tc) |
| Power dissipation | 104W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 3.5V @ 360µA |
| Rds on (Max) @ id, vgs | 450mOhm @ 7.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 35 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1053 pF @ 400 V |
The recommended drive voltage for minimum on-resistance is 10 V, with a maximum gate-to-source rating of ±20 V. Input capacitance is 1053 pF at 400 V drain-source — a moderate figure that allows direct drive from a standard PWM controller without excessive gate-charge demand.
The part is ROHS3 compliant.
The maximum on-resistance is 450 mOhm at a drain current of 7.2 A with a 10 V gate drive. This is the figure to use for conduction loss calculations in the power stage.
The maximum gate charge is 35 nC at a 10 V gate drive. This moderate charge allows the MOSFET to switch at frequencies typical of PFC and flyback converters without requiring a high-current gate driver.
The device is supplied in a PG-TO251-3 package, which is a through-hole IPak (TO-251AA) with three short leads. It is designed for through-hole mounting on a PCB or heatsink.