950 V N-channel in a TO-251 — where this CoolMOS P7 fits
The IPU95R3K7P7AKMA1: The 950 V rating places it above the standard 800 V class.
3.7 Ohm Rds(on) and 6 nC gate charge — the switching trade-off
Maximum on-resistance is 3.7 Ohm at 800 mA drain current with 10 V gate drive. Input capacitance is 196 pF at 400 V drain-source.
-55 to 150 °C junction — military temperature range without a premium
Power dissipation is rated at 22 W at case temperature — the limiting factor in a compact TO-251 board layout is the copper area on the drain tab, not the silicon die. The 150 °C ceiling allows the part to share a heatsink with a warm flyback controller or PFC choke in a sealed enclosure.
It is RoHS3 compliant per the current revision.
Not a drop-in for surface-mount CoolMOS parts
The IPU95R3K7P7AKMA1 is the correct choice when the circuit sees DC bus voltages above 500 V and the assembly process accepts through-hole components.