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Infineon Technologies IPU80R900P7AKMA1

IPU80R900P7AKMA1 CoolMOS™ P7 N-Channel MOSFET, 800 V, 6 A

MPNIPU80R900P7AKMA1
End of Life

Infineon CoolMOS™ P7 series, N-Channel MOSFET, 800 V drain-source, 6 A continuous drain, 900 mOhm Rds(on) at 10 V gate drive, TO-251-3 through-hole package, -55 to 150 °C junction temperature.

$1.33Ref. price · indicative, final on quote
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
SeriesCoolMOS™ P7
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPU80R900P7AKMA1 specifications
ParameterValue
SeriesCoolMOS™ P7
FET typeN-Channel
MountingThrough Hole
Drain to source voltage800 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C6A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id3.5V @ 110µA
Rds on (Max) @ id, vgs900mOhm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds350 pF @ 500 V

Product details

800 V switching — where the rating matters

The IPU80R900P7AKMA1: The 800 V Vdss suits offline flyback converters, PFC stages, and auxiliary power supplies.

On-resistance and gate drive — sizing the loss budget

The 45 W package limit at case temperature means a heatsink is mandatory for continuous operation above a few amps. Gate charge is 15 nC at 10 V.

Through-hole package — thermal and mechanical fit

The TO-251-3 (PG-TO251-3) through-hole package with short leads suits boards where vibration resistance or manual rework is a priority.

Frequently asked questions

Where can I buy IPU80R900P7AKMA1?

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What is the datasheet for IPU80R900P7AKMA1?

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Is IPU80R900P7AKMA1 obsolete?

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What is the cross reference for IPU80R900P7AKMA1?

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How much does IPU80R900P7AKMA1 cost?

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What is the equivalent of IPU80R900P7AKMA1?

When original is out of stock, an alternative is needed for production.