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Infineon Technologies IPU60R1K5CEAKMA2
Infineon Technologies

IPU60R1K5CEAKMA2 CoolMOS CE N-Ch 600V 3.1A MOSFET TO-251

MPNIPU60R1K5CEAKMA2
End of Life

Infineon CoolMOS™ CE series, IPU60R1K5CEAKMA2, N-Channel MOSFET, 600 V Vdss, 3.1 A Id, 1.5 Ohm Rds(on) at 10 V, 9.4 nC Qg, PG-TO251-3 through-hole package.

$0.63Ref. price · indicative, final on quote
IPU60R1K5CEAKMA2 datasheet
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPU60R1K5CEAKMA2 Technical Specifications
ParameterValue
SeriesCoolMOS™ CE
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C3.1A (Tc)
Power dissipation49W (Tc)
Operating temperature-40°C ~ 150°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id3.5V @ 90µA
Rds on (Max) @ id, vgs1.5Ohm @ 1.1A, 10V
Gate charge (Qg) (Max) @ vgs9.4 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds200 pF @ 100 V

Product details

600 V N-channel with 1.5 Ohm Rds(on) — the low-power offline switch

Gate charge is 9.4 nC at 10 V, and input capacitance sits at 200 pF at 100 V drain bias — a light load on the gate driver, which keeps the drive-stage BOM lean in space-constrained designs.

Through-hole TO-251 — fit for manual assembly and vibration

The PG-TO251-3 package (IPak variant with short leads) is a through-hole footprint that suits wave-solder or hand-solder assembly. The three leads drop into a 2.54 mm pitch hole pattern, and the tab is soldered to the board pad for thermal management — the device is rated for 49 W power dissipation at the case. The maximum gate-source voltage is ±20 V, so standard 10–15 V gate drive rails are safe.

Frequently asked questions

What is the closest functional second-source to IPU60R1K5CEAKMA2?

The IPD50R950CEAUMA1 is a CoolMOS CE N-channel with 500 V Vdss and 950 mOhm Rds(on) in a surface-mount DPAK package. The 600 V rating and through-hole footprint of the IPU60R1K5CEAKMA2 are not drop-in substitutes — rewiring and a different PCB footprint are required.