Infineon CoolMOS™ IPU60R1K4C6, N-Channel Power MOSFET, 650 V Vdss, 3.2 A Id, 1.4 Ohm Rds(on) @ 10 V, 9.4 nC Qg, TO-251-3 IPak Through Hole, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | CoolMOS™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 3.2A (Tc) |
| Power dissipation | 28.4W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Bulk |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 3.5V @ 90µA |
| Rds on (Max) @ id, vgs | 1.4Ohm @ 1.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 9.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 200 pF @ 100 V |
The 650 V Vdss gives headroom for universal-input offline designs with reflected voltage spikes; derate for avalanche energy if the application is unclamped inductive switching.
The TO-251-3 IPak package has short leads and is designed for through-hole soldering with a low board profile. The supplier device package code PG-TO-251-3-341 is the Infineon-specific variant — verify the lead form and hole pattern against your PCB footprint before committing the layout.
It is ROHS3 compliant.
The maximum on-resistance is 1.4 Ohm at a drain current of 1.1 A and 10 V gate drive.
Yes, the IPU60R1K4C6 is ROHS3 compliant.