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Infineon Technologies IPU50R950CE
Infineon Technologies

Infineon IPU50R950CE CoolMOS™ N-Channel MOSFET, 500 V, 6.6 A

MPNIPU50R950CE
End of Life

Infineon CoolMOS™ CE series, IPU50R950CE, N-Channel MOSFET, 500 Vdss, 6.6 A Id, 950 mOhm Rds(on) @ 1.2 A, 13 V, 10.5 nC Qg, ±20 Vgs, TO-251-3 (PG-TO251-3), Through Hole, -55°C to 150°C.

$0.16Ref. price · indicative, final on quote
IPU50R950CE datasheet
PackagingTO-251-3 Short Leads, IPak, TO-251AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IPU50R950CE Technical Specifications
ParameterValue
SeriesCoolMOS™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)13V
Current - continuous drain (Id) @ 25°C6.6A (Tc)
Power dissipation53W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id3.5V @ 100µA
Rds on (Max) @ id, vgs950mOhm @ 1.2A, 13V
Gate charge (Qg) (Max) @ vgs10.5 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds231 pF @ 100 V

Product details

Through-hole vs DPAK — the mounting decision

The closest functional sibling is the IPD50R950CEAUMA1, which shares the same 500 V / 6.6 A die, 950 mOhm Rds(on), 10.5 nC gate charge, and ±20 Vgs maximum.

Active lifecycle — no LTB clock running

The IPU50R950CE carries an Active product status. The part is also ROHS3 compliant, so it meets current European and many global restriction-of-hazardous-substances requirements without a waiver. For BOM planning, this means the part can be specified into a new design without an imminent obsolescence risk.

Frequently asked questions

What is the difference between IPU50R950CE and IPP50R950CE?

Both are 500 V / 6.6 A CoolMOS™ CE N-channel MOSFETs with the same 950 mOhm Rds(on) and 10.5 nC gate charge. The IPU50R950CE is in a through-hole TO-251-3 package (PG-TO251-3), while the IPP50R950CE is in a through-hole TO-220-3 package. The TO-220 offers a larger mounting tab for better heat sinking into a chassis or larger heatsink.

Is IPU50R950CE suitable for high-voltage switching applications?

Yes, with a 500 V drain-to-source rating and 6.6 A continuous drain current, it is designed for offline power supplies, flyback converters, PFC stages, and other high-voltage switched-mode circuits. The low gate charge (10.5 nC) supports efficient switching at typical SMPS frequencies.

Is IPU50R950CE RoHS compliant?

Yes, it is ROHS3 compliant, meeting the latest RoHS directive requirements.

What is the closest functional second-source for IPU50R950CE?

The IPD50R950CEAUMA1 is the closest functional equivalent, sharing the same 500 V / 6.6 A die, 950 mOhm Rds(on), and 10.5 nC gate charge. It differs in package — surface-mount DPAK (PG-TO252-3) versus the through-hole TO-251-3 of the IPU50R950CE.