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Infineon Technologies IPU06N03LZG

Infineon IPU06N03LZG N-Channel MOSFET, 25 V, 50 A, 5.1 mOhm

MPNIPU06N03LZG
End of Life

Infineon OptiMOS™2 IPU06N03LZG, N-Channel MOSFET, 25 V Vdss, 50 A Id, 5.1 mOhm Rds(on) at 10 V, 22 nC Qg, TO-251-3 (PG-TO251-3-21) through-hole package, -55 to 175 °C.

$0.43Ref. price · indicative, final on quote
Infineon Technologies IPU06N03LZG datasheet (PDF)
PackagingTO-251-3 Short Leads, IPak, TO-251AA
RoHSROHS3 Compliant
SeriesOptiMOS™2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPU06N03LZG specifications
ParameterValue
SeriesOptiMOS™2
FET typeN-Channel
MountingThrough Hole
Drain to source voltage25 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C50A (Tc)
Power dissipation83W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageBulk
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-251-3 Short Leads, IPak, TO-251AA
Vgs(th) (Max) @ id2V @ 40µA
Rds on (Max) @ id, vgs5.1mOhm @ 30A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds2783 pF @ 15 V

Product details

25 V, 50 A N-channel in a TO-251 — what this OptiMOS™2 part delivers

The Infineon IPU06N03LZG is an N-channel power MOSFET from the OptiMOS™2 series, rated for 25 V drain-to-source and 50 A continuous drain current at 25 °C case temperature. Gate charge is 22 nC at 5 V, which suits medium-frequency switching in DC-DC converters, load switches, and battery management circuits. The through-hole TO-251-3 (PG-TO251-3-21) package with short leads is a space-saving alternative to DPAK for board-level soldering or socketed mounting.

Frequently asked questions

Is IPU06N03LZG obsolete or End of Life?

No. Infineon lists the IPU06N03LZG as Active.

What is the Rds(on) of IPU06N03LZG?

The maximum on-resistance is 5.1 mOhm at 30 A drain current with 10 V gate drive.