Infineon IPTG111N20NM3FDATMA1 OptiMOS™ 3 N-Channel MOSFET, 200 V Vdss, 11.1 mOhm Rds(on) at 10 V. The continuous drain current is rated 108 A when the case temperature is held at 25°C, but derates to 10.8 A at ambient — a reminder that the package alone (PG-HSOG-8-1) cannot shed the heat of a 100 A load without a proper heatsink or forced airflow.
Gate charge and switching
With a gate charge of 81 nC at 10 V, this MOSFET sits in the moderate range for a 200 V device. That means the gate driver does not need to supply excessive peak current to hit fast switching edges, but the switching losses still need to be budgeted in a hard-switched topology. The input capacitance is 7000 pF at 100 V drain-source, which influences the driver's sink/source capability and the turn-on delay.
The PG-HSOG-8-1 is an 8-lead PowerSMD with gull-wing leads — a surface-mount package that relies on the PCB copper pour and thermal vias to pull heat from the exposed pad. The datasheet lists 3.8 W dissipation at ambient and 375 W at case, so the board layout determines how much current you can actually push.
Infineon lists this part as Active in the product portfolio, and it is ROHS3 compliant.