IPTG011N08NM5ATMA1

Infineon Technologies · OptiMOS™ 5 Series

MOSFET N-CH 80V 42A/408A HSOG-8

Infineon Technologies IPTG011N08NM5ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPTG011N08NM5ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage80 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C42A (Ta), 408A (Tc)
Power dissipation3.8W (Ta), 375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSMD, Gull Wing
Vgs(th) (Max) @ id3.8V @ 280µA
Rds on (Max) @ id, vgs1.1mOhm @ 150A, 10V
Gate charge (Qg) (Max) @ vgs223 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds17000 pF @ 40 V
IPTG011N08NM5ATMA1
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