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Infineon Technologies IPTG007N06NM5ATMA1

Infineon IPTG007N06NM5ATMA1 N-Channel MOSFET, 60V, 0.75mOhm

MPNIPTG007N06NM5ATMA1
End of Life

Infineon OptiMOS™ 5 IPTG007N06NM5ATMA1, N-Channel MOSFET, 60 V Vdss, 0.75 mOhm Rds(on) @ 150 A, 10 V, 454 A continuous drain (Tc), 261 nC gate charge, PG-HSOG-8-1 package, -55 to 175 °C.

$6.54Ref. price · indicative, final on quote
Packaging8-PowerSMD, Gull Wing
RoHSROHS3 Compliant
SeriesOptiMOS™ 5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPTG007N06NM5ATMA1 specifications
ParameterValue
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C53A (Ta), 454A (Tc)
Power dissipation3.8W (Ta), 375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSMD, Gull Wing
Vgs(th) (Max) @ id3.3V @ 280µA
Rds on (Max) @ id, vgs0.75mOhm @ 150A, 10V
Gate charge (Qg) (Max) @ vgs261 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds21000 pF @ 30 V

Product details

Operating junction temperature spans -55 to 175 °C, which is the full automotive-grade range. The PG-HSOG-8-1 package is a surface-mount PowerSO-8 with gull-wing leads and a large exposed pad — the pad footprint and via array under the part are what carry the heat. Treat the 53 A ambient rating as the no-heatsink ceiling; above that, budget for forced air or a thermal interface to the chassis.

The OptiMOS™ 5 series is Infineon's mainstream high-current trench MOSFET platform, so supply depth is generally good across the distribution channel.

Frequently asked questions

What is the Rds(on) of IPTG007N06NM5ATMA1?

Maximum on-resistance is 0.75 mOhm at 150 A drain current with a 10 V gate drive.

What is the Gate charge of IPTG007N06NM5ATMA1?

Total gate charge is 261 nC at a 10 V gate voltage.

Is IPTG007N06NM5ATMA1 RoHS compliant?

Yes, it is ROHS3 compliant.