IPTG007N06NM5ATMA1

Infineon Technologies · OptiMOS™ 5 Series

Infineon OptiMOS™ 5 IPTG007N06NM5ATMA1, N-Channel MOSFET, 60 V Vdss, 0.75 mOhm Rds(on) @ 150 A, 10 V, 454 A continuous drain (Tc), 261 nC gate charge, PG-HSOG-8-1 package, -55 to 175 °C.

Infineon Technologies IPTG007N06NM5ATMA1
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPTG007N06NM5ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C53A (Ta), 454A (Tc)
Power dissipation3.8W (Ta), 375W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-PowerSMD, Gull Wing
Vgs(th) (Max) @ id3.3V @ 280µA
Rds on (Max) @ id, vgs0.75mOhm @ 150A, 10V
Gate charge (Qg) (Max) @ vgs261 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds21000 pF @ 30 V

Technical details

Operating junction temperature spans -55 to 175 °C, which is the full automotive-grade range. The PG-HSOG-8-1 package is a surface-mount PowerSO-8 with gull-wing leads and a large exposed pad — the pad footprint and via array under the part are what carry the heat. Treat the 53 A ambient rating as the no-heatsink ceiling; above that, budget for forced air or a thermal interface to the chassis.

The OptiMOS™ 5 series is Infineon's mainstream high-current trench MOSFET platform, so supply depth is generally good across the distribution channel.

IPTG007N06NM5ATMA1
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