IPTC054N15NM5ATMA1

Infineon Technologies · OptiMOS™ 5 Series

Infineon OptiMOS™ 5 series, IPTC054N15NM5ATMA1, N-Channel MOSFET, 150 V Vdss, 5.4 mOhm Rds(on) @ 50 A, 10 V, 143 A continuous drain, PG-HDSOP-16-2 package, -55 to 175 °C junction temperature.

Infineon Technologies IPTC054N15NM5ATMA1
Download datasheet (PDF)
[ALLOC] Allocation Sourcing · Shortage Support
$8.50/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IPTC054N15NM5ATMA1 specifications
Parameter / AttributeSpecification / Value
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage150 V
Drive voltage (Max rds on, min rds on)8V, 10V
Current - continuous drain (Id) @ 25°C17.5A (Ta), 143A (Tc)
Power dissipation3.8W (Ta), 250W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case16-PowerSOP Module
Vgs(th) (Max) @ id4.6V @ 191µA
Rds on (Max) @ id, vgs5.4mOhm @ 50A, 10V
Gate charge (Qg) (Max) @ vgs73 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds5700 pF @ 75 V

Technical details

IPTC054N15NM5ATMA1
[ALLOC] verified
Quote