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Infineon Technologies IPTC019N10NM5ATMA1

Infineon IPTC019N10NM5ATMA1 N-Channel MOSFET, 100 V

MPNIPTC019N10NM5ATMA1
End of Life

Infineon OptiMOS™ 5 N-Channel MOSFET, 100 V Vdss, 279 A (Tc) continuous drain, 1.9 mOhm Rds(on) at 10 V, PG-HDSOP-16-2 surface-mount package, -55°C to 175°C junction temperature.

$6.28Ref. price · indicative, final on quote
Infineon Technologies IPTC019N10NM5ATMA1 datasheet (PDF)
Packaging16-PowerSOP Module
RoHSROHS3 Compliant
SeriesOptiMOS™ 5
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IPTC019N10NM5ATMA1 specifications
ParameterValue
SeriesOptiMOS™ 5
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)6V, 10V
Current - continuous drain (Id) @ 25°C31A (Ta), 279A (Tc)
Power dissipation3.8W (Ta), 300W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case16-PowerSOP Module
Vgs(th) (Max) @ id3.8V @ 210µA
Rds on (Max) @ id, vgs1.9mOhm @ 100A, 10V
Gate charge (Qg) (Max) @ vgs160 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds12000 pF @ 50 V

Product details

Thermal performance and power dissipation

The IPTC019N10NM5ATMA1: Maximum power dissipation is 300 W at case temperature (Tc) and 3.8 W at ambient (Ta) — the package thermal path is the limiter. To approach the 279 A continuous drain rating, a large heatsink or forced air is required to keep the junction below 175 °C. The 175 °C maximum junction temperature allows operation in high-ambient environments like engine bays or industrial enclosures without premature derating.

It is surface-mount only.

It is ROHS3 compliant, with no lead exemptions. The series is OptiMOS 5, Infineon's 5th-generation trench MOSFET platform.

Frequently asked questions

Is IPTC019N10NM5ATMA1 lead-free?

Yes, it is ROHS3 compliant, meaning no lead exemptions apply.