The Infineon IPT60R150G7XTMA1 is a 650 V N-channel CoolMOS™ G7 MOSFET in a PG-HSOF-8-2 surface-mount package. It is a high-voltage switching device built for power conversion stages where low conduction and fast switching both matter. The 150 mOhm on-resistance at 5.3 A and 10 V increases with junction temperature. The PG-HSOF-8-2 exposed pad is the primary thermal path. The 23 nC total gate charge at 10 V keeps gate-drive energy low. A standard driver handles the load.
Switching and thermal — the parametric picture
Input capacitance is 902 pF at 400 V drain-source. That is a moderate figure — the driver sees a manageable capacitive load at turn-on, and the miller plateau stays short enough for clean edge rates in hard-switched topologies like PFC or LLC. The gate threshold voltage is 4 V maximum at 260 µA drain current. A 10 V gate drive is recommended for the rated Rds(on); the ±20 V Vgs absolute maximum allows margin. Power dissipation is rated at 106 W at the case. The PG-HSOF-8-2 exposed pad needs a good thermal via array and copper pour to keep the junction below 150°C at full load.
ROHS3 compliant — no exemptions for lead in solder or other restricted substances, which simplifies compliance for EU and global markets.
Package and footprint — what the PG-HSOF-8-2 needs
The 8-PowerSFN (PG-HSOF-8-2) is a surface-mount package with an exposed drain pad on the bottom. The pad is the primary thermal path and the drain connection — the PCB footprint must have a matching copper area and at least four thermal vias to the inner ground plane to get the 106 W dissipation rating. The package is compatible with standard reflow profiles.