600 V CoolMOS G7 — switching loss and conduction floor
The gate threshold voltage is 4 V maximum at 390 µA drain current, meaning the device requires a gate drive above 4 V to begin conducting; the 10 V drive level is recommended to achieve the specified 102 mOhm Rds(on). Maximum gate-source voltage is ±20 V, so the gate drive circuit must be clamped to avoid exceeding this limit during switching transients or ringing. Input capacitance is 1320 pF maximum at 400 V drain-source, which together with the 34 nC gate charge defines the switching losses and the driver's peak current requirement.